MLD850-100S9N Laser Diode Specifictions

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

9.0mm Package
Internal Circuit & Pin Connection
Bottom View
Optical output power Po 100 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -60 to +60 °
Storage temperature Tstg -70 to +85 °

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po - 100 - mW Kink free
Threshold current Ith - 25 - mA -
Operating current Iop - 170 230 mA Po=100mW
Operating voltage Vop - 2.25 2.4 V Po=100mW
Lasing wavelength lp 840 850 860 nM Po=100mW
Beam divergence q // 8 10 12 ° Po=100mW
Beam divergence q ^ 25 30 35 ° Po=100mW
Slope efficiency h 0.5 - 0.8 mW/mA CW
Monitor current Is 0.2 - 1.3 mA Po=100mW

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Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.

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